REGULARITIES OF WO3 FILM FORMATION DURING THERMAL OXIDATION OF W(111) AND THEIR ELECTRONIC STRUCTURE
Keywords:
oxidation, Auger electrons, photoelectron spectra, elastically reflected electrons, island growth, density of state, band gapAbstract
For the first time in an ultra-high vacuum device, the optimal conditions for the formation of WO3/W(111) nanofilms by thermal oxidation were obtained and determined. The most perfect WO3 films were obtained by oxidizing W at T = 1100 K in an oxygen atmosphere with a partial pressure of P = (1–5)*10-3 Pa. The composition, densities of state of valence electrons and parameters of the energy bands of WO3 were studied using the methods of Auger electron spectroscopy, ultraviolet photoelectron spectroscopy and recording of the energy dependences of the secondary electron emission coefficients. It was found that in the density of state of valence electrons of WO3 in the range of Eb = 0 – 5 eV there are three maxima formed due to the hybridization of 6s and 5d electrons of W with 2p electrons of oxygen. The band gap of the film is ~ 2.8 eV.
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